| PART |
Description |
Maker |
| K4S643232H-TC70 K4S643232H-TL70 K4S643232H-TC_L50 |
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 183MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 166MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 200MHz
64Mb H-die (x32) SDRAM Specification
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| EM484M1644VTA-55L |
64Mb SDRAM
|
List of Unclassifed Manufacturers
|
| EM482M3244VTA-5L |
64Mb SDRAM
|
List of Unclassifed Manufacturers
|
| K4S640832K K4S641632K K4S641632K-T K4S640832K-T_UC |
64Mb K-die SDRAM
|
SAMSUNG[Samsung semiconductor]
|
| H5DU6462CTR-E3X H5DU6462CTR-K2X H5DU6462CTR-K3X H5 |
64Mb DDR SDRAM
|
Hynix Semiconductor
|
| W3DG647V-D2 W3DG647V7D2 W3DG647V75D2 W3DG647V10D2 |
64MB- 8Mx64 SDRAM UNBUFFERED
|
White Electronic Design...
WEDC[White Electronic Designs Corporation]
|
| MSM586SL MSM586SL-32 MSM586SL-64 |
Soldered 32MB SDRAM (64MB)
|
Advanced Digital Logic, Inc.
|
| W3DG648V10D2 W3DG648V-D2 W3DG648V7D2 W3DG648V75D2 |
64MB- 8Mx64 SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
| W3DG728V75D2 W3DG728V7D2 W3DG728V10D2 W3DG728V-D2 |
64MB-8Mx72 SDRAM W/ PLL, REGISTER AND SPD
|
WEDC[White Electronic Designs Corporation]
|
| HYB39S256160CT-8A HYB39S256160CTL-8A HYB39S256800C |
x16 SDRAM
179 POS FR-4 PGA SOCKET
x8 SDRAM x8 SDRAM内存
|
Infineon Technologies AG
|
| K4S641632H-UC60 K4S641632H-UC70 K4S641632H-UC75 K4 |
64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) 64芯片与内存规格铅54 TSOP-II免费（符合RoHS
D-Subminiature Connector; Gender:Female; No. of Contacts:50; Contact Termination:IDC; D Sub Shell Size:DB50; Body Material:Steel; Contact Plating:Gold Over Nickel RoHS Compliant: Yes 64芯片与内存规格铅54 TSOP-II免费（符合RoHS
64Mb H-die SDRAM Specification 54 TSOP-II with Pb-Free 64芯片与内存规格铅54 TSOP-II免费
DELTA CONN 14POS PLUG W/O INSERT
DELTA CONN 14 POS PLUG BAIL LOCK
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| HY57V641620ET-7 HY57V641620ESTP-H HY57V641620ET-H |
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
